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NP4N65G 650V N-Channel Enhancement Mode MOSFET

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Description

NP4N65G 650V N-Channel Enhancement Mode MOSFET .
Schematic diagram The NP4N65G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in P.

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Datasheet Specifications

Part number
NP4N65G
Manufacturer
natlinear
File Size
573.89 KB
Datasheet
NP4N65G-natlinear.pdf
Description
650V N-Channel Enhancement Mode MOSFET

Features

* VDS =650V,ID =4A RDS(ON)(Typ. )= 2.49Ω @VGS=10V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package
* 150 °C operating temperature

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