BAS116L-Q Datasheet - nexperia

BAS116L-Q Low-leakage diode

BAS116L-Q Features

* Switching time typical: trr = 0.8 µs

* Low leakage current typical: IR = 3 pA

* Repetitive peak reverse voltage: VRRM ≤ 85 V

* Low capacitance typical: Cd = 2 pF

* Leadless ultra small SMD plastic package

* Low package height of 0.48 mm

* Qua

Datasheet Details

BAS116L-Q

205.69 KB

Low-leakage diode.

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