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BAS116L-Q - Low-leakage diode

Product Overview

nexperia

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BAS116L-Q Low-leakage diode by nexperia - Datasheet Preview — Datasheet preview – BAS116L-Q

Datasheet Details

Part number	BAS116L-Q
Manufacturer	nexperia
File Size	205.69 KB
Description	Low-leakage diode
Datasheet	BAS116L-Q Datasheet
Additional preview pages of the BAS116L-Q datasheet.

Product details

Description

Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

Features

Switching time typical: trr = 0.8 µs.
Low leakage current typical: IR = 3 pA.
Repetitive peak reverse voltage: VRRM ≤ 85 V.
Low capacitance typical: Cd = 2 pF.
Leadless ultra small SMD plastic package.
Low package height of 0.48 mm.
Qualified according to AEC-Q101 and recommended for use in automotive.

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Published: Apr 18, 2025 |