BAS116GW Datasheet - nexperia

BAS116GW - Low leakage switching diode

BAS116GW Features

* High switching speed: trr = 0.8 µs

* Low leakage current: IR = 3 pA

* Repetitive peak reverse voltage VRRM ≤ 85 V

* Low capacitance: Cd = 2 pF

* Small SMD plastic package

* AEC-Q101 qualified 3. Applications

* Low-leakage current application

Datasheet Details

BAS116GW

195.83 KB

Low leakage switching diode.

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