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BAS116QA Low-leakage diode

BAS116QA Description

BAS116QA Low-leakage diode 3 May 2016 Product data sheet 1.General .
Single low-leakage current switching diode encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package wi.

BAS116QA Features

* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
* Repetitive peak reverse voltage VRRM ≤ 85 V
* Low capacitance Cd = 2 pF
* Ultra small SMD plastic package
* Low package height of 0.37 mm
* Suitable for Automatic Optical I

BAS116QA Applications

* Low-leakage current applications
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current Tamb = 25 °C [1] VR reverse voltage Tj = 25 °C VF forwar

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