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BAS116QA-Q Low-leakage diode

BAS116QA-Q Description

BAS116QA-Q Low-leakage diode 7 March 2025 Product data sheet 1.General .
Low-leakage current switching diode encapsulated in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visi.

BAS116QA-Q Features

* High switching speed: trr = 0.8 µs
* Low leakage current: IR = 3 pA
* Repetitive peak reverse voltage VRRM ≤ 85 V
* Low capacitance Cd = 2 pF
* Ultra small SMD plastic package
* Low package height of 0.37 mm
* Suitable for Automatic Optical I

BAS116QA-Q Applications

* 3. Applications
* Low-leakage current applications
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current Tamb = 25 °C [1] VR reverse voltage Tj =

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