BAS116QA-Q Datasheet - nexperia

BAS116QA-Q Low-leakage diode

BAS116QA-Q Features

* High switching speed: trr = 0.8 µs

* Low leakage current: IR = 3 pA

* Repetitive peak reverse voltage VRRM ≤ 85 V

* Low capacitance Cd = 2 pF

* Ultra small SMD plastic package

* Low package height of 0.37 mm

* Suitable for Automatic Optical I

Datasheet Details

BAS116QA-Q

221.98 KB

Low-leakage diode.

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