BAS116-Q Datasheet - nexperia

BAS116-Q, Low-leakage diode

BAS116-Q Low-leakage diode 17 February 2025 Product data sheet 1.
General description Epitaxial medium-speed switching diode with a low leakage curr

Features

* Plastic SMD package
* Low leakage current: typ.
3 pA
* Switching time: typ.
0.8 us
* Continuous reverse voltage: max.
75 V
* Repetitive peak reverse voltage: max.
85 V
* Repetitive peak forward current: max.
500 mA
* Qualified according to AE

Applications

* 3. Applications
* Low leakage current applications in surface mounted circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF IR trr VRRM forward current reverse current reverse recovery time repetitive peak reverse voltage tp ≤ 300 µs; δ ≤ 0.02

BAS116-Q-nexperia.pdf