Datasheet4U.com

BAS116-Q - Low-leakage diode

nexperia

📥 Download Datasheet

BAS116-Q Datasheet Preview — Preview of BAS116-Q PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	BAS116-Q
Manufacturer	nexperia ↗
File Size	194.16 KB
Description	Low-leakage diode
Datasheet	BAS116-Q-nexperia.pdf

BAS116-Q Product details

Description

Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package.

Features

Plastic SMD package.
Low leakage current: typ. 3 pA.
Switching time: typ. 0.8 us.
Continuous reverse voltage: max. 75 V.
Repetitive peak reverse voltage: max. 85 V.
Repetitive peak forward current: max. 500 mA.
Qualified according to AEC-Q101 and recommended for use in automotive.

📁 BAS116-Q Similar Datasheet

BAS116-AU - LOW LEAKAGE SWITCHING DIODES (Pan Jit International)
BAS116H - low leakage diode (NXP)
BAS116L - Switching Diode (ON Semiconductor)
BAS116LP3 - ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE (Diodes)
BAS116LPH4 - SURFACE MOUNT SWITCHING DIODE (Diodes)
BAS116LT1 - Switching Diode (ON Semiconductor)
BAS116T - SURFACE MOUNT LOW LEAKAGE DIODE (Diodes Incorporated)
BAS116TT1G - Switching Diode (ON Semiconductor)

Other Datasheets by nexperia

BAS116 - Low-leakage diode
BAS116GW - Low leakage switching diode
BAS116L-Q - Low-leakage diode
BAS116QA - Low-leakage diode
BAS116QA-Q - Low-leakage diode
BAS16 - High-speed switching diode

Published: Jul 13, 2025 |