BAS16GW-Q Datasheet - nexperia

BAS16GW-Q - High-speed switching diode

BAS16GW-Q Features

* High switching speed: trr ≤ 4 ns

* Low leakage current

* Repetitive peak reverse voltage VRRM ≤ 100 V

* Low capacitance

* Small SMD plastic package

* High-temperature applications up to 175 °C

* Qualified according to AEC-Q101 and recommended

Datasheet Details

BAS16GW-Q

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High-speed switching diode.

BAS16GW-Q Distributor

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