BAS16GW-Q Datasheet - nexperia

High-speed switching diode

* High switching speed: trr ≤ 4 ns

* Low leakage current

* Repetitive peak reverse voltage VRRM ≤ 100 V

* Low capacitance

* Small SMD plastic package

* High-temperature applications up to 175 °C

* Qualified according to AEC-Q101 and recommended

BAS16GW-Q

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High-speed switching diode.

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BAS16GW-Q High-speed switching diode nexperia

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