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BAS16DY-Q High-speed dual switching diode

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Description

BAS16DY-Q High-speed dual switching diode 20 April 2023 Product data sheet 1.General .
High-speed switching, electrically isolated dual diode, encapsulated in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package.

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Features

* High switching speed: trr ≤ 4 ns
* Low capacitance
* Low leakage current
* Reverse voltage: VR ≤ 100 V
* Repetitive peak reverse voltage: VRRM ≤ 100 V

Applications

* 3. Applications
* High-speed switching
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VR reverse voltage IR reverse current trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA;

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