BAS16VY-Q Datasheet - nexperia

BAS16VY-Q High-speed switching diode

BAS16VY-Q Features

* High switching speed: trr ≤ 4 ns

* Low capacitance

* Low leakage current

* Reverse voltage: VR ≤ 100 V

* Repetitive peak reverse voltage: VRRM ≤ 100 V

* Very small SMD plastic packages

* Qualified according to AEC-Q101 and recommended for use

Datasheet Details

BAS16VY-Q

215.75 KB

High-speed switching diode.

📁 Related Datasheet

BAS16VY High-speed switching diodes (NXP)

BAS16VY High-speed switching diode (nexperia)

BAS16V Switching Diodes (MCC)

BAS16V Plastic-Encapsulate Diodes (WILLAS)

BAS16V Plastic-Encapsulated Transistors (SeCoS)

BAS16V SWITCHING DIODE (JCET)

BAS16V DUAL SURFACE MOUNT SWITCHING DIODE (Diodes Incorporated)

BAS16VA SURFACE MOUNT SWITCHING DIODE ARRAY (DIODES)

TAGS

BAS16VY-Q High-speed switching diode nexperia

BAS16VY-Q Distributor