Datasheet Details
- Part number
- BUK4D60-30
- Manufacturer
- nexperia ↗
- File Size
- 296.66 KB
- Datasheet
- BUK4D60-30-nexperia.pdf
- Description
- N-channel MOSFET
BUK4D60-30 Description
BUK4D60-30 30 V, N-channel Trench MOSFET 7 July 2020 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Tr.
BUK4D60-30 Features
* Extended temperature range Tj = 175 °C
* Trench MOSFET technology
* Very fast switching
* Side wettable flanks for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
BUK4D60-30 Applications
* DC to DC conversion
* High-speed line driver
* Low-side load switch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Ptot
total power dissipation
📁 Related Datasheet
📌 All Tags