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BUK661R9-40C N-channel TrenchMOS intermediate level FET

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Description

BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev.1 * 18 August 2010 Product data sheet 1.Product profile 1.1 General descrip.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

BUK661R9-40C Distributors

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