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BUK6D120-60P - P-channel MOSFET

BUK6D120-60P Description

BUK6D120-60P 60 V, P-channel Trench MOSFET 3 April 2018 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

BUK6D120-60P Features

* Extended temperature range Tj = 175 ℃
* Side wettable flanks for optical solder inspection
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Trench MOSFET technology

BUK6D120-60P Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -10 V; T

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