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BUK6D140-80P 80V P-channel Trench MOSFET

BUK6D140-80P Description

BUK6D140-80P 80 V, P-channel Trench MOSFET 1 October 2025 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

BUK6D140-80P Features

* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Trench MOSFET technology
* Extended temperature range Tj = 175 °C
* Side wettable flanks for optical solder inspection

BUK6D140-80P Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Ptot total power dissipation Stat

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