BUK6D22-30E - N-channel MOSFET

Product Overview

nexperia

Datasheet Details

Part number	BUK6D22-30E
Manufacturer	nexperia
File Size	280.20 KB
Description	N-channel MOSFET
Datasheet	BUK6D22-30E Datasheet
Additional preview pages of the BUK6D22-30E datasheet.

Product details

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Extended temperature range Tj = 175 °C.
Side wettable flanks for optical solder inspection.
ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2).
Trench MOSFET technology.
AEC-Q101 qualified 3.

📁 Similar Datasheet

BUK6207-30C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
BUK6207-55C - N-Channel MOSFET (NXP Semiconductors)
BUK6208-40C - N-channel TrenchMOS intermediate level FET (NXP)
BUK6209-30C - N-channel TrenchMOS intermediate level FET (NXP)
BUK6210-55C - N-Channel MOSFET (NXP Semiconductors)
BUK6211-75C - N-channel TrenchMOS FET (NXP Semiconductors)
BUK6212-40C - N-channel TrenchMOS intermediate level FET (NXP)
BUK6213-30A - N-Channel MOSFET (NXP Semiconductors)

Other Datasheets by nexperia

BUK6D210-60E - N-channel MOSFET
BUK6D23-40E - N-channel Trench MOSFET
BUK6D230-80E - N-channel MOSFET
BUK6D120-40E - N-channel MOSFET
BUK6D120-60P - P-channel MOSFET
BUK6D125-60E - N-channel MOSFET

Published: Jul 28, 2019 |