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BUK661R8-30C Datasheet - NXP

BUK661R8-30C, N-channel TrenchMOS intermediate level FET

D2PAK BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev.2.1 * 18 August 2011 Product data sheet 1.Product profile 1.1 Genera.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Datasheet Details

Part number:

BUK661R8-30C

Manufacturer:

File Size:

172.99 KB

Description:

N-channel TrenchMOS intermediate level FET

Features

* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

BUK661R8-30C Distributors

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BUK661R8-30C N-channel TrenchMOS intermediate level FET NXP

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