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BUK664R6-40C - N-channel TrenchMOS intermediate level FET

BUK664R6-40C Description

www.DataSheet4U.com BUK664R6-40C N-channel TrenchMOS intermediate level FET Rev.01 * 21 May 2010 Objective data sheet 1.Product profile 1..
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK664R6-40C Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

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N-channel TrenchMOS intermediate level FET NXP
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