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BUK662R7-55C N-Channel MOSFET

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Description

BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev.01 * 7 September 2010 Product data sheet 1.Product profile 1.1 General descript.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

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BUK662R7-55C N-Channel MOSFET NXP Semiconductors
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