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BUK663R5-55C - N-channel TrenchMOS FET

BUK663R5-55C Description

DataSheet.in BUK663R5-55C N-channel TrenchMOS FET Rev.01 * 3 August 2010 Objective data sheet 1.Product profile 1.1 General .
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK663R5-55C Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

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N-channel TrenchMOS FET NXP Semiconductors
NXP Semiconductors BUK663R5-55C-like datasheet