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BUK663R5-55C N-channel TrenchMOS FET

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Description

DataSheet.in BUK663R5-55C N-channel TrenchMOS FET Rev.01 * 3 August 2010 Objective data sheet 1.Product profile 1.1 General .
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

BUK663R5-55C Distributors

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📌 All Tags

BUK663R5-55C N-channel TrenchMOS FET NXP Semiconductors
NXP Semiconductors BUK663R5-55C-like datasheet
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