BUK7V4R2-40H - Dual N-channel MOSFET

nexperia

BUK7V4R2-40H Datasheet Preview — Preview of BUK7V4R2-40H PDF

Datasheet Details

Part number	BUK7V4R2-40H
Manufacturer	nexperia ↗
File Size	306.28 KB
Description	Dual N-channel MOSFET
Datasheet	BUK7V4R2-40H-nexperia.pdf

BUK7V4R2-40H Product details

Description

Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology.This product has been designed and qualified to AEC-Q101. G1 An internal connection is made between the source (S1) of the high- side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM G2 applications.D1 S1, D2 S2 aaa-028081 2.

Features

LFPAK56D package with half-bridge configuration enables:.
Reduced PCB layout complexity.
PCB shrinkage through reduced component footprint for 3-phase motor drive.
Improved system level Rth(j-amb) due to optimized package design.
Lower parasitic inductance to support higher efficiency.
Footprint compatibility with LFPAK56D Dual package.
Advanced AEC-Q101 grade Trench 9 silicon technology:.
Low power losses, high power densi.

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Published: Jul 11, 2024 |