MJPE31CH-Q - 100V 3A NPN high power bipolar transistor

nexperia

MJPE31CH-Q Description

MJPE31CH-Q 100 V, 3 A NPN high power bipolar transistor 22 April 2025 Product data sheet 1.General .
NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.

MJPE31CH-Q Features

* High thermal power dissipation capability
* High energy efficiency due to less heat generation
* High current gain at VCE = 60 V
* Electrically similar to popular MJD31 series
* Low collector emitter saturation voltage
* Qualified according to AEC-Q1

MJPE31CH-Q Applications

* 3. Applications
* Power management
* Load switch
* Linear mode voltage regulator
* Constant current drive backlighting application
* Motor drive
* Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO coll

📥 Download Datasheet

MJPE31CH-Q Datasheet Preview — Preview of MJPE31CH-Q PDF

Datasheet Details

Part number: MJPE31CH-Q
Manufacturer: nexperia ↗
File Size: 268.47 KB
Datasheet: MJPE31CH-Q-nexperia.pdf
Description: 100V 3A NPN high power bipolar transistor

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100V NPN high power bipolar transistor nexperia

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