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NSF040120T2A1 N-channel SiC MOSFET

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Description

X.PAK NSF040120T2A1 1200 V, 40 mΩ, N-channel SiC MOSFET 24 March 2025 Product data sheet 1.General .
The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.

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Features

* Excellent RDSon temperature stability
* Very low switching losses
* Fast reverse recovery
* Fast switching speed
* Temperature independent turn-off switching losses
* Very fast and robust intrinsic body diode
* Faster commutation and improved

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