NSF040120T2A1 Datasheet - nexperia

N-channel SiC MOSFET

NSF040120T2A1 Features

* Excellent RDSon temperature stability

* Very low switching losses

* Fast reverse recovery

* Fast switching speed

* Temperature independent turn-off switching losses

* Very fast and robust intrinsic body diode

* Faster commutation and improved

NSF040120T2A1 General Description

The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial appl.

NSF040120T2A1 Datasheet (1.37 MB)