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PBSS4160PANS-Q 60V 1A NPN/NPN low VCEsat transistor

PBSS4160PANS-Q Description

PBSS4160PANS-Q 60 V, 1 A NPN/NPN low VCEsat transistor 7 April 2025 Product data sheet 1.General .
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020D-6 (SOT1118D) SurfaceMounted Device (SMD) plastic package with visible and solderable.

PBSS4160PANS-Q Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* Exposed heat sink for excellent thermal and electrical condu

PBSS4160PANS-Q Applications

* 3. Applications
* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* LED lighting
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per transistor VCEO collect

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