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PBSS4112PANP 1A NPN/PNP low VCEsat (BISS) transistor

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Description

PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 29 November 2012 Product data sheet 1.Product profile 1.1 General .
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

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Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* High efficiency due to less heat generation
* AEC-Q1

Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor; for the PNP transistor with negative pol

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