PBSS4130PANP NPN/NPN low VCEsat (BISS) transistor

NXP

Description

PBSS4130PANP 12 December 2012 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1.General .
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

📥 Download Datasheet

PBSS4130PANP Datasheet Preview — Preview of PBSS4130PANP PDF

Datasheet Specifications

Part number: PBSS4130PANP
Manufacturer: NXP ↗
File Size: 361.05 KB
Datasheet: PBSS4130PANP_NXP.pdf
Description: NPN/NPN low VCEsat (BISS) transistor

Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q1

Applications

* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 1 A; IB = 0.1 A; pulsed; tp ≤

PBSS4130PANP Distributors

📁 Related Datasheet

PBSS4130QA PBSS4120T PBSS4140DPN PBSS4140T PBSS4140U PBSS4140V

📌 All Tags

PBSS4130PANP NPN NPN low VCEsat BISS transistor NXP

NXP PBSS4130PANP-like datasheet