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PBSS4130PANP NPN/NPN low VCEsat (BISS) transistor

PBSS4130PANP Description

PBSS4130PANP 12 December 2012 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1.General .
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

PBSS4130PANP Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q1

PBSS4130PANP Applications

* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 1 A; IB = 0.1 A; pulsed; tp ≤

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Datasheet Details

Part number
PBSS4130PANP
Manufacturer
NXP ↗
File Size
361.05 KB
Datasheet
PBSS4130PANP_NXP.pdf
Description
NPN/NPN low VCEsat (BISS) transistor

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NPN NPN low VCEsat BISS transistor NXP
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