* High power dissipation (830 mW)
* Ultra low collector-emitter saturation voltage
* 1 A continuous current
* High current switching
* Improved device reliability due to reduced heat generation. APPLICATIONS
* Medium power switching and muting
PBSS4140S Datasheet (71.71 KB)
PBSS4140S
71.71 KB
Npn transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PBSS4140S 40 V low VCEsat NPN transistor
Product data sheet Supersedes data of 2001 Nov 27.
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