PBSS4140DPN 40 V low VCEsat NPN/PNP transistor

NXP Semiconductors

Description

www.DataSheet.co.kr DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product speciﬁcation 2.
TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX.

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Datasheet Specifications

Part number: PBSS4140DPN
Manufacturer: NXP ↗ Semiconductors
File Size: 144.98 KB
Datasheet: PBSS4140DPN_NXPSemiconductors.pdf
Description: 40 V low VCEsat NPN/PNP transistor

Features

* 600 mW total power dissipation
* Low collector-emitter saturation voltage
* High current capability
* Improved device reliability due to reduced heat generation
* Replaces two SOT23 packaged low VCEsat transistors on same PCB area
* Reduces required

Applications

* General purpose switching and muting
* LCD backlighting
* Supply line switching circuits
* Battery driven equipment (mobile phones, video cameras and hand-held devices). 6 handbook, halfpage 5 4 PBSS4140DPN QUICK REFERENCE DATA SYMBOL VCEO IC ICM TR1 TR2 RCEsat PIN

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PBSS4140DPN low VCEsat NPN PNP transistor NXP Semiconductors

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