PBSS4140DPN Datasheet (NXP Semiconductors) - 40 V low VCEsat NPN/PNP transistor

PBSS4140DPN, 40 V low VCEsat NPN/PNP transistor

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX.

40 1 2 * * <500 UNIT V A A * * mΩ 6 5 4 DESCRIPTION TR2 NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plas

PBSS4140DPN Features

* 600 mW total power dissipation

* Low collector-emitter saturation voltage

* High current capability

* Improved device reliability due to reduced heat generation

* Replaces two SOT23 packaged low VCEsat transistors on same PCB area

* Reduces required