* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi
PBSS4032NT Datasheet (208.68 KB)
PBSS4032NT
NXP ↗ Semiconductors
208.68 KB
2.6a npn low vcesat (biss) transistor.
DataSheet.in
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
Rev. 01
* 18 December 2009 Product data sheet
1. Product profile
1.1 Ge.
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