PBSS4032NT 2.6A NPN low VCEsat (BISS) transistor

NXP Semiconductors

Description

DataSheet.in PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor Rev.01 * 18 December 2009 Product data sheet 1.Product profile 1.1 Ge.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS4032NT
Manufacturer: NXP ↗ Semiconductors
File Size: 208.68 KB
Datasheet: PBSS4032NT_NXPSemiconductors.pdf
Description: 2.6A NPN low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi

Applications

* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter

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2.6A NPN low VCEsat BISS transistor NXP Semiconductors

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