* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi
PBSS4032ND Datasheet (176.18 KB)
PBSS4032ND
NXP ↗ Semiconductors
176.18 KB
3.5a npn low vcesat (biss) transistor.
DataSheet.in
PBSS4032ND
30 V, 3.5 A NPN low VCEsat (BISS) transistor
Rev. 01
* 30 January 2010 Product data sheet
1. Product profile
1.1 Gen.
📁 Related Datasheet
PBSS4032NT 2.6A NPN low VCEsat (BISS) transistor (NXP Semiconductors)
PBSS4032NX NPN transistor (nexperia)
PBSS4032NX 4.7 A NPN low VCEsat (BISS) transistor (NXP)
PBSS4032NZ 4.9A NPN transistor (nexperia)
PBSS4032PD 2.7A PNP low VCEsat (BISS) transistor (NXP Semiconductors)
PBSS4032PT 2.4A PNP low VCEsat (BISS) transistor (NXP Semiconductors)
PBSS4032PX 4.2 A PNP low VCEsat (BISS) transistor (NXP)
PBSS4032PX PNP transistor (nexperia)
PBSS4032PZ 4.4 A PNP low VCEsat (BISS) transistor (NXP)
PBSS4032PZ PNP transistor (nexperia)
