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PBSS4041NT - 3.8A NPN low VCEsat (BISS) transistor

PBSS4041NT Description

DataSheet.in PBSS4041NT 60 V, 3.8 A NPN low VCEsat (BISS) transistor Rev.01 * 31 January 2010 Product data sheet 1.Product profile 1.1 Gen.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PBSS4041NT Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Ci

PBSS4041NT Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak

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3.8A NPN low VCEsat BISS transistor NXP Semiconductors
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