Datasheet Details
- Part number
- PBSS4041SN
- Manufacturer
- NXP ↗
- File Size
- 192.69 KB
- Datasheet
- PBSS4041SN_PhilipsSemiconductors.pdf
- Description
- 6.7A NPN/NPN Low V_CEsat (BISS) Transistor
PBSS4041SN Description
DataSheet.in PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor Rev.1 * 14 July 2010 Product data sheet 1.Product profile 1.1 Gen.
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
PBSS4041SN Features
* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conv
PBSS4041SN Applications
* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans)
1.4 Quick reference data
Table 2. VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.2 A
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