* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conv
PBSS4041SN Datasheet (192.69 KB)
PBSS4041SN
192.69 KB
6.7a npn/npn low v_cesat (biss) transistor.
DataSheet.in
PBSS4041SN
60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor
Rev. 1
* 14 July 2010 Product data sheet
1. Product profile
1.1 Gen.
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