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PBSS4041SN - 6.7A NPN/NPN Low V_CEsat (BISS) Transistor

PBSS4041SN Description

DataSheet.in PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor Rev.1 * 14 July 2010 Product data sheet 1.Product profile 1.1 Gen.
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

PBSS4041SN Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conv

PBSS4041SN Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 1.4 Quick reference data Table 2. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.2 A

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6.7A NPN NPN Low V_CEsat BISS Transistor NXP
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