* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Ci
PBSS4041PT Datasheet (209.19 KB)
PBSS4041PT
NXP ↗ Semiconductors
209.19 KB
2.7a pnp low vcesat (biss) transistor.
DataSheet.in
PBSS4041PT
60 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 02
* 9 March 2010 Product data sheet
1. Product profile
1.1 Genera.
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