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PBSS4041NX-Q 60V 6.2A NPN low VCEsat transistor

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Description

PBSS4041NX-Q 60 V, 6.2 A NPN low VCEsat transistor 17 January 2025 Product data sheet 1.General .
NPN low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

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Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* Qualified according to AEC-Q101 and recommended for use

Applications

* 3. Applications
* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM RCEsat colle

PBSS4041NX-Q Distributors

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