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PBSS4041PZ - 5.7 A PNP low VCEsat (BISS) transistor

PBSS4041PZ Description

www.DataSheet4U.com PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev.01 * 31 March 2010 Product data sheet 1.Product profile 1..
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PBSS4041PZ Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Ci

PBSS4041PZ Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak

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5.7 PNP low VCEsat BISS transistor NXP
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