Datasheet Details
- Part number
- PBSS4041PZ
- Manufacturer
- NXP ↗
- File Size
- 214.69 KB
- Datasheet
- PBSS4041PZ_PhilipsSemiconductors.pdf
- Description
- 5.7 A PNP low VCEsat (BISS) transistor
PBSS4041PZ Description
www.DataSheet4U.com PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev.01 * 31 March 2010 Product data sheet 1.Product profile 1..
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PBSS4041PZ Features
* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Ci
PBSS4041PZ Applications
* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1]
Quick reference data Parameter collector-emitter voltage collector current peak
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