* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
* Smaller required Printed-Ci
PBSS4041NX Datasheet (712.76 KB)
PBSS4041NX
712.76 KB
6.2a npn transistor.
PBSS4041NX
60 V, 6.2 A NPN low VCEsat (BISS) transistor
11 December 2012
Product data sheet
1. Technical summary
NPN low VCEsat Breakthrough In Sm.
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