* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi
PBSS4032PT Datasheet (198.45 KB)
PBSS4032PT
NXP ↗ Semiconductors
198.45 KB
2.4a pnp low vcesat (biss) transistor.
DataSheet.in PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 Ge.
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