PBSS4032PT 2.4A PNP low VCEsat (BISS) transistor

NXP Semiconductors

Description

DataSheet.in PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev.01 * 18 December 2009 Product data sheet 1.Product profile 1.1 Ge.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

📥 Download Datasheet

PBSS4032PT Datasheet Preview — Preview of PBSS4032PT PDF

Datasheet Specifications

Part number: PBSS4032PT
Manufacturer: NXP ↗ Semiconductors
File Size: 198.45 KB
Datasheet: PBSS4032PT_NXPSemiconductors.pdf
Description: 2.4A PNP low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi

Applications

* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter

PBSS4032PT Distributors

📁 Related Datasheet

PBSS4032PX PBSS4032PZ PBSS4032NX PBSS4032NZ PBSS4032SN PBSS4032SP

📌 All Tags

PBSS4032PT 2.4A PNP low VCEsat BISS transistor NXP Semiconductors

NXP Semiconductors PBSS4032PT-like datasheet