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PBSS4032PX - 4.2 A PNP low VCEsat (BISS) transistor

PBSS4032PX Description

www.DataSheet4U.com PBSS4032PX 30 V, 4.2 A PNP low VCEsat (BISS) transistor Rev.01 * 1 April 2010 Product data sheet 1.Product profile 1.1.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic packa.

PBSS4032PX Features

* Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qu

PBSS4032PX Applications

* Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current col

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