Datasheet Details
- Part number
- PBSS4032NZ
- Manufacturer
- nexperia ↗
- File Size
- 715.36 KB
- Datasheet
- PBSS4032NZ-nexperia.pdf
- Description
- 4.9A NPN transistor
PBSS4032NZ Description
PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev.01 * 31 March 2010 Product data sheet 1.Product profile 1.1 General descripti.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PBSS4032NZ Features
* Low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
PBSS4032NZ Applications
* DC-to-DC conversion
* Battery-driven devices
* Power management
* Charging circuits
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector cur
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