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PBSS4032NZ - 4.9A NPN transistor

PBSS4032NZ Description

PBSS4032NZ 30 V, 4.9 A NPN low VCEsat (BISS) transistor Rev.01 * 31 March 2010 Product data sheet 1.Product profile 1.1 General descripti.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PBSS4032NZ Features

* Low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified

PBSS4032NZ Applications

* DC-to-DC conversion
* Battery-driven devices
* Power management
* Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector cur

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