PBSS4032SP 4.8A PNP/PNP Low V_CEsat (BISS) Transistor

NXP

Description

DataSheet.in PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev.1 * 14 July 2010 Product data sheet 1.Product profile 1.1 Gen.
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS4032SP
Manufacturer: NXP ↗
File Size: 188.71 KB
Datasheet: PBSS4032SP_PhilipsSemiconductors.pdf
Description: 4.8A PNP/PNP Low V_CEsat (BISS) Transistor

Features

* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit

Applications

* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC =
* 4 A; IB =
* 0.4 A [1] Symbol Parame

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PBSS4032SP 4.8A PNP PNP Low V_CEsat BISS Transistor NXP

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