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PBSS4032SP - 4.8A PNP/PNP Low V_CEsat (BISS) Transistor

PBSS4032SP Description

DataSheet.in PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev.1 * 14 July 2010 Product data sheet 1.Product profile 1.1 Gen.
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

PBSS4032SP Features

* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit

PBSS4032SP Applications

* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC =
* 4 A; IB =
* 0.4 A [1] Symbol Parame

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4.8A PNP PNP Low V_CEsat BISS Transistor NXP
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