Datasheet Details
- Part number
- PBSS4032SN
- Manufacturer
- NXP ↗
- File Size
- 190.45 KB
- Datasheet
- PBSS4032SN_PhilipsSemiconductors.pdf
- Description
- 5.7A NPN/NPN Low V_CEsat (BISS) Transistor
PBSS4032SN Description
DataSheet.in PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Rev.1 * 14 July 2010 Product data sheet 1.Product profile 1.1 Gen.
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
PBSS4032SN Features
* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit
PBSS4032SN Applications
* DC-to-DC conversion Battery-driven devices Power management Charging circuits
1.4 Quick reference data
Table 2. VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.4 A
[1]
Symbol Parameter collector-emit
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