Datasheet Details
- Part number
- PBSS4032NX
- Manufacturer
- nexperia ↗
- File Size
- 708.05 KB
- Datasheet
- PBSS4032NX-nexperia.pdf
- Description
- NPN transistor
PBSS4032NX Description
PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev.01 * 1 April 2010 Product data sheet 1.Product profile 1.1 General descriptio.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic packa.
PBSS4032NX Features
* Very low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
PBSS4032NX Applications
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
pea
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