* Very low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
PBSS4032NX Datasheet (708.05 KB)
PBSS4032NX
708.05 KB
Npn transistor.
PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 01
* 1 April 2010
Product data sheet
1. Product profile
1.1 General descriptio.
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