PBSS4032NX NPN transistor

nexperia

Description

PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev.01 * 1 April 2010 Product data sheet 1.Product profile 1.1 General descriptio.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic packa.

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Datasheet Specifications

Part number: PBSS4032NX
Manufacturer: nexperia ↗
File Size: 708.05 KB
Datasheet: PBSS4032NX-nexperia.pdf
Description: NPN transistor

Features

* Very low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified

Applications

* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current pea

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