PBSS4032PZ 4.4 A PNP low VCEsat (BISS) transistor

NXP

Description

www.DataSheet4U.com PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev.01 * 31 March 2010 Product data sheet 1.Product profile 1..
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

📥 Download Datasheet

PBSS4032PZ Datasheet Preview — Preview of PBSS4032PZ PDF

Datasheet Specifications

Part number: PBSS4032PZ
Manufacturer: NXP ↗
File Size: 224.38 KB
Datasheet: PBSS4032PZ_PhilipsSemiconductors.pdf
Description: 4.4 A PNP low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi

Applications

* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter

PBSS4032PZ Distributors

📁 Related Datasheet

PBSS4032PD PBSS4032PT PBSS4032ND PBSS4032NT PBSS4032NX PBSS4032NZ

📌 All Tags

4.4 PNP low VCEsat BISS transistor NXP

NXP PBSS4032PZ-like datasheet