Datasheet Specifications
- Part number
- PBSS4032SPN
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 240.76 KB
- Datasheet
- PBSS4032SPN_NXPSemiconductors.pdf
- Description
- 30V NPN/PNP low VCEsat (BISS) transistor
Description
DataSheet.in PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev.1 * 14 July 2010 Product data sheet 1.Product profile 1.1 General d.
Features
* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-CircuitApplications
* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.4 A [1] Symbol Parameter TR1; NPN low VCEsat transistor VCEO ICPBSS4032SPN Distributors
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