* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit
PBSS4032SPN Datasheet (240.76 KB)
PBSS4032SPN
NXP ↗ Semiconductors
240.76 KB
30v npn/pnp low vcesat (biss) transistor.
DataSheet.in
PBSS4032SPN
30 V NPN/PNP low VCEsat (BISS) transistor
Rev. 1
* 14 July 2010 Product data sheet
1. Product profile
1.1 General d.
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