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PBSS4032SPN - 30V NPN/PNP low VCEsat (BISS) transistor

PBSS4032SPN Description

DataSheet.in PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev.1 * 14 July 2010 Product data sheet 1.Product profile 1.1 General d.
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

PBSS4032SPN Features

* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit

PBSS4032SPN Applications

* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 0.4 A [1] Symbol Parameter TR1; NPN low VCEsat transistor VCEO IC

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30V NPN PNP low VCEsat BISS transistor NXP Semiconductors
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