Datasheet Specifications
- Part number
- PBSS4032PD
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 208.11 KB
- Datasheet
- PBSS4032PD_NXPSemiconductors.pdf
- Description
- 2.7A PNP low VCEsat (BISS) transistor
Description
DataSheet.in PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev.01 * 27 January 2010 Product data sheet 1.Product profile 1.1 Gen.
Features
* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifiApplications
* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitterPBSS4032PD Distributors
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