* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi
PBSS4032PD Datasheet (208.11 KB)
PBSS4032PD
NXP ↗ Semiconductors
208.11 KB
2.7a pnp low vcesat (biss) transistor.
DataSheet.in PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 27 January 2010 Product data sheet 1. Product profile 1.1 Gen.
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