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PBSS4032PD - 2.7A PNP low VCEsat (BISS) transistor

PBSS4032PD Description

DataSheet.in PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev.01 * 27 January 2010 Product data sheet 1.Product profile 1.1 Gen.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

PBSS4032PD Features

* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi

PBSS4032PD Applications

* DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter

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2.7A PNP low VCEsat BISS transistor NXP Semiconductors
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