Datasheet Details
- Part number
- PBSS4021PT
- Manufacturer
- nexperia ↗
- File Size
- 161.54 KB
- Datasheet
- PBSS4021PT-nexperia.pdf
- Description
- PNP Transistor
PBSS4021PT Description
PBSS4021PT 20 V, 3.5 A PNP low VCEsat (BISS) transistor Rev.01 * 29 January 2010 Product data sheet 1.Product profile 1.1 General descrip.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PBSS4021PT Features
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
* Smaller required Printed-Ci
PBSS4021PT Applications
* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
c
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