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PBSS4032NX - 4.7 A NPN low VCEsat (BISS) transistor

PBSS4032NX Description

www.DataSheet4U.com PBSS4032NX 30 V, 4.7 A NPN low VCEsat (BISS) transistor Rev.01 * 1 April 2010 Product data sheet 1.Product profile 1.1.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic packa.

PBSS4032NX Features

* Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qu

PBSS4032NX Applications

* Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current col

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4.7 NPN low VCEsat BISS transistor NXP
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