* Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qu
PBSS4032NX Datasheet (224.96 KB)
PBSS4032NX
224.96 KB
4.7 a npn low vcesat (biss) transistor.
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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 01
* 1 April 2010 Product data sheet
1. Product profile
1.1.
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