Datasheet Details
- Part number
- PBSS4021NZ
- Manufacturer
- nexperia ↗
- File Size
- 708.98 KB
- Datasheet
- PBSS4021NZ-nexperia.pdf
- Description
- NPN transistor
PBSS4021NZ Description
PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev.01 * 31 March 2010 Product data sheet 1.Product profile 1.1 General .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PBSS4021NZ Features
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
* Smaller required Printed-Ci
PBSS4021NZ Applications
* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
c
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