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PBSS4130PAN NPN/NPN low VCEsat (BISS) transistor

PBSS4130PAN Description

DF N2 020 -6 PBSS4130PAN 11 January 2013 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1.General .
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic.

PBSS4130PAN Features

* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generation

PBSS4130PAN Applications

* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = 1 A; IB =

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Datasheet Details

Part number
PBSS4130PAN
Manufacturer
NXP ↗
File Size
293.87 KB
Datasheet
PBSS4130PAN_NXP.pdf
Description
NPN/NPN low VCEsat (BISS) transistor

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NPN NPN low VCEsat BISS transistor NXP
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