Datasheet Specifications
- Part number
- PBSS4130PAN
- Manufacturer
- NXP ↗
- File Size
- 293.87 KB
- Datasheet
- PBSS4130PAN_NXP.pdf
- Description
- NPN/NPN low VCEsat (BISS) transistor
Description
DF N2 020 -6 PBSS4130PAN 11 January 2013 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1.General .Features
* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High energy efficiency due to less heat generationApplications
* Load switch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = 1 A; IB =PBSS4130PAN Distributors
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