* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency leading to less heat generation
* Reduced printed-circuit board requirements
* Cost effective alternative to MOSFETs in specific applications. AP
PBSS4120T Datasheet (58.65 KB)
PBSS4120T
58.65 KB
Npn transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS4120T 20 V, 1 A NPN low VCEsat (BISS) transistor
Product data sheet
2003 Sep 29
NXP Semiconductors
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