PBSS4160DPN Datasheet - nexperia

PBSS4160DPN 60V 1A NPN/PNP low VCEsat transistor

PBSS4160DPN Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* High collector current gain (hFE) at high IC

* High efficiency due to less heat generation

* Smaller required Printed-Circuit Board (PCB) area than for conventi

Datasheet Details

PBSS4160DPN

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60v 1a npn/pnp low vcesat transistor.

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PBSS4160DPN 60V NPN PNP low VCEsat transistor nexperia

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