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PBSS4160PANPS NPN/NPN Transistor

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Description

PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1.General .
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasti.

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Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain hFE at high IC
* Reduced Printed-Circuit Board (PCB) requirements
* Exposed heat sink for excellent thermal and electrical condu

Applications

* Load switch
* Battery-driven devices
* Power management
* Charging circuits
* LED lighting
* Power switches (e. g. motors, fans)

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